The 1N6383RL4 is a bidirectional transient voltage suppressor diode with a breakdown voltage of 11.7V and a clamping voltage of 14.5V. It can handle a maximum non-repetitive peak reverse power dissipation of 1500mW. The diode is made of silicon and has a maximum power dissipation of 5W. It is available in a 2-pin axial package.
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Onsemi 1N6383RL4 technical specifications.
| Number of Terminals | 2 |
| Terminal Position | AXIAL |
| Pin Count | 2 |
| Number of Elements | 1 |
| Polarity | BIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Rep Pk Reverse Voltage-Max | 10 |
| Breakdown Voltage-Min | 11.7 |
| Non-rep Peak Rev Power Dis-Max | 1500 |
| Clamping Voltage-Max | 14.5 |
| Power Dissipation-Max | 5 |
| RoHS | Yes |
| Eccn Code | EAR99 |
| HTS Code | 8541.10.00.50 |
| REACH | not_compliant |
| Military Spec | False |
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