General purpose rectifier diode for small signal switching applications. Features a maximum repetitive reverse voltage of 75V and a reverse recovery time of 4ns. This single element diode offers an average rectified current of 200mA and a forward current of 300mA. Designed for surface mount with tin, matte contact plating, it operates within a temperature range of -55°C to 150°C. Packaged in tape and reel, this RoHS compliant component has a power dissipation of 200mW.
MountingSurface Mount
Power200mW
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Technical Specifications
Onsemi 1N914BWT technical specifications.
General
| Average Rectified Current | 200mA |
| Contact Plating | Tin, Matte |
| Element Configuration | Single |
| Forward Current | 300mA |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Repetitive Reverse Voltage (Vrrm) | 75V |
| Max Reverse Current | 5uA |
| Max Reverse Leakage Current | 5uA |
| Max Reverse Voltage (DC) | 75V |
| Mount | Surface Mount |
| Package Quantity | 8000 |
| Packaging | Tape and Reel |
| Power Dissipation | 200mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Reverse Recovery Time | 4ns |
| Reverse Recovery Time-Max | 4ns |
| RoHS Compliant | Yes |
| Weight | 0.01g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi 1N914BWT Datasheet
Download the complete datasheet for Onsemi 1N914BWT to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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