
Single-element, general-purpose rectifier diode with a 200mA average rectified current and a 100V repetitive peak reverse voltage. Features a low 2pF capacitance and a 4ns reverse recovery time. Encased in a DO-35 package for through-hole mounting, this silicon diode operates from -65°C to 175°C and handles a 4A peak non-repetitive surge current. RoHS compliant with 500mW power dissipation.
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Onsemi 1N916 technical specifications.
| Average Rectified Current | 200mA |
| Capacitance | 2pF |
| Package/Case | DO-35 |
| Current Rating | 200mA |
| Element Configuration | Single |
| Forward Current | 200mA |
| Lead Free | Lead Free |
| Max Forward Surge Current (Ifsm) | 4A |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -65°C |
| Max Repetitive Reverse Voltage (Vrrm) | 100V |
| Max Reverse Current | 5uA |
| Max Reverse Voltage (DC) | 100V |
| Max Surge Current | 4A |
| Mount | Through Hole |
| Output Current | 200mA |
| Package Quantity | 2000 |
| Packaging | Bulk |
| Peak Non-Repetitive Surge Current | 4A |
| Polarity | Standard |
| Power Dissipation | 500mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Reverse Recovery Time | 4ns |
| Reverse Recovery Time-Max | 4ns |
| Reverse Voltage | 100V |
| RoHS Compliant | Yes |
| DC Rated Voltage | 100V |
| Weight | 80g |
| RoHS | Compliant |
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