
NPN bipolar junction transistor (BJT) in a TO-92 package, designed for general-purpose applications. Features a maximum collector-emitter voltage (VCEO) of 30V and a continuous collector current rating of 500mA. Offers a minimum DC current gain (hFE) of 100 and a transition frequency of 100MHz. Operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 625mW. Through-hole mounting and RoHS compliant.
Onsemi 2N3704 technical specifications.
| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | 50V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | 1V |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector-emitter Voltage-Max | 1V |
| Current Rating | 500mA |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 100MHz |
| Height | 5.33mm |
| hFE Min | 100 |
| Lead Free | Lead Free |
| Length | 5.2mm |
| Max Collector Current | 500mA |
| Max Frequency | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Package Quantity | 2000 |
| Packaging | Bulk |
| Polarity | NPN |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
| DC Rated Voltage | 30V |
| Width | 4.19mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi 2N3704 to view detailed technical specifications.
No datasheet is available for this part.
