
NPN bipolar junction transistor (BJT) with a maximum collector-emitter voltage (VCEO) of 140V and a continuous collector current rating of 16A. Features a maximum power dissipation of 150W and a collector-emitter saturation voltage of 1.4V. Encased in a TO-204-3 package, this component operates within a temperature range of -65°C to 200°C. RoHS compliant and lead-free.
Onsemi 2N3773G technical specifications.
| Package/Case | TO-204-3 |
| Collector Base Voltage (VCBO) | 160V |
| Collector Emitter Breakdown Voltage | 140V |
| Collector Emitter Saturation Voltage | 1.4V |
| Collector Emitter Voltage (VCEO) | 140V |
| Collector-emitter Voltage-Max | 1.4V |
| Current Rating | 16A |
| Emitter Base Voltage (VEBO) | 7V |
| Height | 8.51mm |
| hFE Min | 15 |
| Lead Free | Lead Free |
| Length | 39.37mm |
| Max Collector Current | 16A |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 150W |
| Number of Elements | 1 |
| Package Quantity | 100 |
| Packaging | Tray |
| Polarity | NPN |
| Power Dissipation | 150W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | 140V |
| Width | 26.67mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi 2N3773G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
