NPN bipolar junction transistor (BJT) in a TO-226-3 (TO-92) through-hole package. Features a 40V collector-emitter voltage (VCEO) and a maximum collector current of 200mA. Offers a minimum DC current gain (hFE) of 100 and a transition frequency of 300MHz. Operates across a temperature range of -55°C to 150°C with a power dissipation of 625mW. Lead-free and RoHS compliant.
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Onsemi 2N3904_D10Z technical specifications.
| Package/Case | TO-226-3 |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Saturation Voltage | 300mV |
| Collector Emitter Voltage (VCEO) | 40V |
| Collector-emitter Voltage-Max | 300mV |
| Current Rating | 200mA |
| Emitter Base Voltage (VEBO) | 6V |
| Frequency | 300MHz |
| Gain Bandwidth Product | 300MHz |
| hFE Min | 100 |
| Lead Free | Lead Free |
| Max Collector Current | 200mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 625mW |
| RoHS Compliant | Yes |
| Series | 2N3904 |
| Transition Frequency | 300MHz |
| DC Rated Voltage | 40V |
| RoHS | Compliant |
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