NPN bipolar junction transistor (BJT) for through-hole mounting in a TO-92 package. Features a 40V collector-emitter voltage (VCEO) and a 200mA maximum collector current. Offers a transition frequency of 300MHz and a minimum hFE of 100. Operates across a temperature range of -55°C to 150°C with a maximum power dissipation of 625mW. Lead-free and RoHS compliant.
Frequency300MHz
PackageTO-92-3
Current Rating200mA
MountingThrough Hole
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Technical Specifications
Onsemi 2N3904_D81Z technical specifications.
General
Package/Case
TO-92-3
Collector Base Voltage (VCBO)
60V
Collector Emitter Breakdown Voltage
40V
Collector Emitter Saturation Voltage
300mV
Collector Emitter Voltage (VCEO)
40V
Collector-emitter Voltage-Max
300mV
Current Rating
200mA
Emitter Base Voltage (VEBO)
6V
Frequency
300MHz
Gain Bandwidth Product
300MHz
hFE Min
100
Lead Free
Lead Free
Max Collector Current
200mA
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
625mW
Mount
Through Hole
Number of Elements
1
Package Quantity
2000
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
625mW
RoHS Compliant
Yes
Series
2N3904
Transition Frequency
300MHz
DC Rated Voltage
40V
Compliance
RoHS
Compliant
Datasheet
Onsemi 2N3904_D81Z Datasheet
Download the complete datasheet for Onsemi 2N3904_D81Z to view detailed technical specifications.
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