PNP Bipolar Junction Transistor (BJT) in a TO-92 package, designed for through-hole mounting. Features a maximum collector current of 200mA and a collector-emitter voltage of 40V. Offers a transition frequency of 250MHz and a minimum DC current gain (hFE) of 100. Operates across a temperature range of -55°C to 150°C with a maximum power dissipation of 625mW. This component is RoHS compliant.
Frequency250MHz
PackageTO-92
Current Rating-200mA
MountingThrough Hole
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Technical Specifications
Onsemi 2N3906BU technical specifications.
General
Package/Case
TO-92
Collector Base Voltage (VCBO)
-40V
Collector Emitter Breakdown Voltage
40V
Collector Emitter Saturation Voltage
-400mV
Collector Emitter Voltage (VCEO)
40V
Collector-emitter Voltage-Max
400mV
Current Rating
-200mA
Emitter Base Voltage (VEBO)
-5V
Frequency
250MHz
Gain Bandwidth Product
250MHz
Height
5.33mm
hFE Min
100
Lead Free
Lead Free
Length
5.2mm
Max Collector Current
200mA
Max Frequency
250MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
625mW
Mount
Through Hole
Number of Elements
1
Package Quantity
1000
Packaging
Bulk
Polarity
PNP
Power Dissipation
625mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
250MHz
DC Rated Voltage
-40V
Weight
0.179g
Width
4.19mm
Compliance
RoHS
Compliant
Datasheet
Onsemi 2N3906BU Datasheet
Download the complete datasheet for Onsemi 2N3906BU to view detailed technical specifications.
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