PNP bipolar junction transistor (BJT) in a TO-92 package, suitable for general-purpose applications. Features a maximum collector-emitter voltage (VCEO) of 40V and a continuous collector current (IC) of 200mA. Offers a minimum DC current gain (hFE) of 60 and a transition frequency (fT) of 250MHz. With a maximum power dissipation of 625mW, this through-hole component operates across a wide temperature range from -55°C to 150°C. The TO-92 package has a body height of 5.33mm and is supplied in bulk packaging.
Frequency250MHz
PackageTO-92-3
Current Rating200mA
MountingThrough Hole
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Technical Specifications
Onsemi 2N3906G technical specifications.
General
Package/Case
TO-92-3
Collector Base Voltage (VCBO)
40V
Collector Emitter Breakdown Voltage
40V
Collector Emitter Saturation Voltage
400mV
Collector Emitter Voltage (VCEO)
40V
Collector-emitter Voltage-Max
400mV
Current Rating
200mA
Emitter Base Voltage (VEBO)
5V
Frequency
250MHz
Gain Bandwidth Product
250MHz
Height
5.33mm
hFE Min
60
Lead Free
Lead Free
Length
5.2mm
Max Collector Current
200mA
Max Frequency
250MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
625mW
Mount
Through Hole
Number of Elements
1
Package Quantity
5000
Packaging
Bulk
Polarity
PNP
Power Dissipation
625mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
Through Hole
Transition Frequency
250MHz
Type
General Purpose
DC Rated Voltage
40V
Width
4.19mm
Compliance
RoHS
Compliant
Datasheet
Onsemi 2N3906G Datasheet
Download the complete datasheet for Onsemi 2N3906G to view detailed technical specifications.
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