PNP bipolar junction transistor (BJT) in a TO-92 package, suitable for general-purpose applications. Features a maximum collector-emitter voltage (VCEO) of 40V and a continuous collector current (IC) of 200mA. Offers a minimum DC current gain (hFE) of 60 and a transition frequency (fT) of 250MHz. With a maximum power dissipation of 625mW, this through-hole component operates across a wide temperature range from -55°C to 150°C. The TO-92 package has a body height of 5.33mm and is supplied in bulk packaging.
Frequency250MHz
PackageTO-92-3
Current Rating200mA
MountingThrough Hole
Quick Jump:
Technical Specifications
Onsemi 2N3906G technical specifications.
General
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | 40V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Saturation Voltage | 400mV |
| Collector Emitter Voltage (VCEO) | 40V |
| Collector-emitter Voltage-Max | 400mV |
| Current Rating | 200mA |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 250MHz |
| Gain Bandwidth Product | 250MHz |
| Height | 5.33mm |
| hFE Min | 60 |
| Lead Free | Lead Free |
| Length | 5.2mm |
| Max Collector Current | 200mA |
| Max Frequency | 250MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 5000 |
| Packaging | Bulk |
| Polarity | PNP |
| Power Dissipation | 625mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | Through Hole |
| Transition Frequency | 250MHz |
| Type | General Purpose |
| DC Rated Voltage | 40V |
| Width | 4.19mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi 2N3906G Datasheet
Download the complete datasheet for Onsemi 2N3906G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
