PNP Bipolar Junction Transistor (BJT) for small signal applications. Features a 40V collector-emitter breakdown voltage and a maximum collector current of 200mA. Offers a minimum DC current gain (hFE) of 60 and a transition frequency of 250MHz. Packaged in a TO-92-3 through-hole mount configuration, with a maximum power dissipation of 625mW and operating temperature range of -55°C to 150°C. This RoHS compliant component is supplied in an ammo pack with 2000 units.
PackageTO-92-3
Current Rating200mA
MountingThrough Hole
PolarityPNP
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Technical Specifications
Onsemi 2N3906RLRMG technical specifications.
General
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | 40V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Saturation Voltage | 400mV |
| Collector Emitter Voltage (VCEO) | 40V |
| Collector-emitter Voltage-Max | 400mV |
| Current Rating | 200mA |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 250MHz |
| hFE Min | 60 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 40V |
| Max Collector Current | 200mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Package Quantity | 2000 |
| Packaging | Ammo Pack |
| Polarity | PNP |
| Radiation Hardening | No |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Transition Frequency | 250MHz |
| DC Rated Voltage | 40V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi 2N3906RLRMG Datasheet
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