PNP Bipolar Junction Transistor (BJT) in a TO-92 package, designed for through-hole mounting. Features a maximum collector-emitter voltage (VCEO) of 40V and a continuous collector current (IC) of 200mA. Offers a minimum DC current gain (hFE) of 100 and a transition frequency (fT) of 250MHz. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 625mW. Supplied on a 2000-piece tape and reel.
Frequency250MHz
PackageTO-92
Current Rating-200mA
MountingThrough Hole
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Technical Specifications
Onsemi 2N3906TFR technical specifications.
General
Package/Case
TO-92
Collector Base Voltage (VCBO)
-40V
Collector Emitter Breakdown Voltage
40V
Collector Emitter Saturation Voltage
-400mV
Collector Emitter Voltage (VCEO)
40V
Collector-emitter Voltage-Max
400mV
Current Rating
-200mA
Emitter Base Voltage (VEBO)
-5V
Frequency
250MHz
Gain Bandwidth Product
250MHz
Height
5.33mm
hFE Min
100
Lead Free
Lead Free
Length
5.2mm
Max Breakdown Voltage
40V
Max Collector Current
200mA
Max Frequency
250MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
625mW
Mount
Through Hole
Number of Elements
1
Package Quantity
2000
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
625mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
250MHz
DC Rated Voltage
-40V
Weight
0.24g
Width
4.19mm
Compliance
RoHS
Compliant
Datasheet
Onsemi 2N3906TFR Datasheet
Download the complete datasheet for Onsemi 2N3906TFR to view detailed technical specifications.
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