
NPN bipolar junction transistor (BJT) for through-hole mounting in a TO-92 package. Features a maximum collector current of 200mA and a collector-emitter breakdown voltage of 25V. Offers a minimum DC current gain (hFE) of 120 and a transition frequency of 300MHz. Operates across a temperature range of -55°C to 150°C with a maximum power dissipation of 625mW. RoHS compliant.
Onsemi 2N4124BU technical specifications.
| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | 30V |
| Collector Emitter Breakdown Voltage | 25V |
| Collector Emitter Voltage (VCEO) | 25V |
| Collector-emitter Voltage-Max | 300mV |
| Current Rating | 200mA |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 300MHz |
| Gain Bandwidth Product | 300MHz |
| hFE Min | 120 |
| Lead Free | Lead Free |
| Max Collector Current | 200mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 625mW |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 300MHz |
| DC Rated Voltage | 25V |
| RoHS | Compliant |
Download the complete datasheet for Onsemi 2N4124BU to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
