NPN bipolar junction transistor (BJT) for through-hole mounting in a TO-92 package. Features a 25V collector-emitter breakdown voltage and a 200mA maximum collector current. Offers a minimum DC current gain (hFE) of 120 and a transition frequency of 300MHz. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 625mW. This RoHS compliant component is supplied in an ammo pack.
Frequency300MHz
PackageTO-92-3
Current Rating200mA
MountingThrough Hole
Quick Jump:
Technical Specifications
Onsemi 2N4124TAR technical specifications.
General
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | 30V |
| Collector Emitter Breakdown Voltage | 25V |
| Collector Emitter Voltage (VCEO) | 25V |
| Collector-emitter Voltage-Max | 300mV |
| Current Rating | 200mA |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 300MHz |
| Gain Bandwidth Product | 300MHz |
| hFE Min | 120 |
| Lead Free | Lead Free |
| Max Collector Current | 200mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Ammo Pack |
| Polarity | NPN |
| Power Dissipation | 625mW |
| RoHS Compliant | Yes |
| Series | 2N4124 |
| Transition Frequency | 300MHz |
| DC Rated Voltage | 25V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi 2N4124TAR Datasheet
Download the complete datasheet for Onsemi 2N4124TAR to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
