NPN Bipolar Junction Transistor (BJT) in a TO-92-3 package for through-hole mounting. Features a 40V collector-emitter breakdown voltage and 600mA maximum collector current. Offers a minimum DC current gain (hFE) of 100 and a transition frequency of 250MHz. Operates across a temperature range of -55°C to 150°C with a maximum power dissipation of 625mW. This RoHS compliant component is supplied on tape and reel.
Frequency250MHz
PackageTO-92-3
Current Rating600mA
MountingThrough Hole
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Technical Specifications
Onsemi 2N4401_D81Z technical specifications.
General
Package/Case
TO-92-3
Collector Base Voltage (VCBO)
60V
Collector Emitter Breakdown Voltage
40V
Collector Emitter Saturation Voltage
750mV
Collector Emitter Voltage (VCEO)
40V
Collector-emitter Voltage-Max
750mV
Current Rating
600mA
Emitter Base Voltage (VEBO)
6V
Frequency
250MHz
Gain Bandwidth Product
250MHz
hFE Min
100
Lead Free
Lead Free
Max Collector Current
600mA
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
625mW
Mount
Through Hole
Number of Elements
1
Package Quantity
2000
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
625mW
Radiation Hardening
No
RoHS Compliant
Yes
Transition Frequency
250MHz
DC Rated Voltage
40V
Compliance
RoHS
Compliant
Datasheet
Onsemi 2N4401_D81Z Datasheet
Download the complete datasheet for Onsemi 2N4401_D81Z to view detailed technical specifications.
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