
NPN Bipolar Junction Transistor (BJT) in a TO-92 package. Features a maximum collector current of 600mA and a collector-emitter breakdown voltage of 40V. Offers a minimum DC current gain (hFE) of 100 and a transition frequency of 250MHz. Operates across a temperature range of -55°C to 150°C with a maximum power dissipation of 625mW. Through-hole mounting, RoHS compliant, and lead-free.
Onsemi 2N4401NLBU technical specifications.
| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Saturation Voltage | 750mV |
| Collector Emitter Voltage (VCEO) | 40V |
| Collector-emitter Voltage-Max | 750mV |
| Current Rating | 600mA |
| Emitter Base Voltage (VEBO) | 6V |
| Gain Bandwidth Product | 250MHz |
| hFE Min | 100 |
| Lead Free | Lead Free |
| Max Collector Current | 600mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Package Quantity | 1000 |
| Packaging | Bulk |
| Polarity | NPN |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 250MHz |
| DC Rated Voltage | 40V |
| Weight | 0.1782g |
| RoHS | Compliant |
Download the complete datasheet for Onsemi 2N4401NLBU to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
