The 2N4918 is a PNP bipolar junction transistor with a collector-emitter breakdown voltage of 40V and a collector-emitter saturation voltage of 600mV. It has a current rating of 1A and a maximum power dissipation of 30W. The transistor is packaged in a TO-225-3 package and is suitable for operation over a temperature range of -65°C to 150°C.
PackageTO-225-3
Current Rating1A
PolarityPNP
Quick Jump:
Chat with Datasheet
Sponsored by
Sign in to ask questions about the Onsemi 2N4918 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Technical Specifications
Onsemi 2N4918 technical specifications.
General
| Package/Case | TO-225-3 |
| Collector Base Voltage (VCBO) | 40V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Saturation Voltage | 600mV |
| Collector-emitter Voltage-Max | 600mV |
| Current Rating | 1A |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 3MHz |
| hFE Min | 40 |
| Lead Free | Contains Lead |
| Max Collector Current | 1A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 30W |
| Package Quantity | 500 |
| Packaging | Bulk |
| Polarity | PNP |
| RoHS Compliant | No |
| Transition Frequency | 3MHz |
| DC Rated Voltage | -40V |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi 2N4918 Datasheet
Download the complete datasheet for Onsemi 2N4918 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
Product Images
