The 2N4921 is a NPN bipolar junction transistor with a collector-emitter breakdown voltage of 40V and a maximum collector current of 1A. It has a maximum power dissipation of 30W and operates over a temperature range of -65°C to 150°C. The transistor is packaged in a TO-225-3 case and is not RoHS compliant. It has a gain bandwidth product of 3MHz and a minimum current gain of 40.
Onsemi 2N4921 technical specifications.
| Package/Case | TO-225-3 |
| Collector Base Voltage (VCBO) | 40V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Saturation Voltage | 600mV |
| Collector-emitter Voltage-Max | 600mV |
| Current Rating | 1A |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 3MHz |
| hFE Min | 40 |
| Lead Free | Contains Lead |
| Max Collector Current | 1A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 30W |
| Package Quantity | 500 |
| Packaging | Bulk |
| Polarity | NPN |
| RoHS Compliant | No |
| Transition Frequency | 3MHz |
| DC Rated Voltage | 40V |
| RoHS | Not Compliant |
No datasheet is available for this part.
