The 2N4923 is an NPN bipolar junction transistor with a collector-emitter breakdown voltage of 80V and a maximum collector current of 1A. It has a maximum power dissipation of 30W and is packaged in a TO-225-3 package. The transistor has a gain bandwidth product of 3MHz and a minimum current gain of 40. It operates over a temperature range of -65°C to 150°C.
PackageTO-225-3
PolarityNPN
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Technical Specifications
Onsemi 2N4923 technical specifications.
General
| Package/Case | TO-225-3 |
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | 600mV |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector-emitter Voltage-Max | 600mV |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 3MHz |
| hFE Min | 40 |
| Max Breakdown Voltage | 350V |
| Max Collector Current | 1A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 30W |
| Package Quantity | 500 |
| Packaging | Bulk |
| Polarity | NPN |
| RoHS Compliant | No |
| Transition Frequency | 3MHz |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi 2N4923 Datasheet
Download the complete datasheet for Onsemi 2N4923 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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