NPN Bipolar Junction Transistor (BJT) for power applications. Features 80V collector-emitter breakdown voltage and 1A maximum collector current. Offers a minimum DC current gain (hFE) of 40 and a transition frequency of 3MHz. Packaged in TO-225 with a maximum power dissipation of 30W. This RoHS compliant component operates from -65°C to 150°C.
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Onsemi 2N4923G technical specifications.
| Package/Case | TO-225-3 |
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | 600mV |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector-emitter Voltage-Max | 600mV |
| Current Rating | 1A |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 3MHz |
| Gain Bandwidth Product | 3MHz |
| Height | 11.04mm |
| hFE Min | 40 |
| Lead Free | Lead Free |
| Length | 7.74mm |
| Max Collector Current | 1A |
| Max Frequency | 3MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 30W |
| Number of Elements | 1 |
| Package Quantity | 500 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 30W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 3MHz |
| DC Rated Voltage | 80V |
| Width | 2.66mm |
| RoHS | Compliant |
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