NPN bipolar junction transistor (BJT) for through-hole mounting in a TO-92 package. Features a maximum collector current of 1A and a collector-emitter breakdown voltage of 30V. Offers a minimum DC current gain (hFE) of 200 and a maximum collector-emitter saturation voltage of 300mV. Operates across a temperature range of -55°C to 150°C with a power dissipation of 625mW. This component is RoHS compliant and lead-free.
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Onsemi 2N4953 technical specifications.
| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | 300mV |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector-emitter Voltage-Max | 300mV |
| Current Rating | 1A |
| Emitter Base Voltage (VEBO) | 5V |
| Height | 5.33mm |
| hFE Min | 200 |
| Lead Free | Lead Free |
| Length | 5.2mm |
| Max Collector Current | 1A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 625mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | 30V |
| Width | 4.19mm |
| RoHS | Compliant |
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