NPN Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 30V collector-emitter voltage (VCEO) and a 50mA maximum collector current. Offers a minimum DC current gain (hFE) of 300 and a transition frequency of 50MHz. Packaged in a TO-92-3 through-hole mount configuration, suitable for tape and reel packaging. Operates across a temperature range of -55°C to 150°C with a maximum power dissipation of 625mW.
Frequency50MHz
PackageTO-92-3
Current Rating50mA
MountingThrough Hole
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Technical Specifications
Onsemi 2N5088RLRA technical specifications.
General
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | 35V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | 500mV |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector-emitter Voltage-Max | 500mV |
| Current Rating | 50mA |
| Emitter Base Voltage (VEBO) | 3V |
| Frequency | 50MHz |
| Gain Bandwidth Product | 50MHz |
| hFE Min | 300 |
| Lead Free | Contains Lead |
| Max Collector Current | 50mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 625mW |
| RoHS Compliant | No |
| Transition Frequency | 50MHz |
| DC Rated Voltage | 30V |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi 2N5088RLRA Datasheet
Download the complete datasheet for Onsemi 2N5088RLRA to view detailed technical specifications.
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