NPN Bipolar Junction Transistor (BJT) in a TO-92-3 package, designed for through-hole mounting. Features a maximum collector-emitter voltage (VCEO) of 30V and a maximum collector current of 100mA. Offers a minimum DC current gain (hFE) of 300 and a transition frequency of 50MHz. Operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 625mW. This component is lead-free and RoHS compliant, supplied in an ammo pack with 2000 units.
Frequency50MHz
PackageTO-92-3
Current Rating100mA
MountingThrough Hole
Quick Jump:
Technical Specifications
Onsemi 2N5088TA technical specifications.
General
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | 35V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | 500mV |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector-emitter Voltage-Max | 500mV |
| Current Rating | 100mA |
| Emitter Base Voltage (VEBO) | 4.5V |
| Frequency | 50MHz |
| Gain Bandwidth Product | 50MHz |
| Height | 5.33mm |
| hFE Min | 300 |
| Lead Free | Lead Free |
| Length | 5.2mm |
| Max Breakdown Voltage | 30V |
| Max Collector Current | 100mA |
| Max Frequency | 50MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Ammo Pack |
| Polarity | NPN |
| Power Dissipation | 625mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 50MHz |
| DC Rated Voltage | 30V |
| Weight | 0.24g |
| Width | 4.19mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi 2N5088TA Datasheet
Download the complete datasheet for Onsemi 2N5088TA to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
