2N5088TA

Datasheet

NPN BJT Transistor, 30V, 100mA, 50MHz, TO-92

Onsemi

2N5088TA

Name: 2N5088TA Onsemi
Brand: Onsemi
SKU: 2N5088TA

NPN BJT Transistor, 30V, 100mA, 50MHz, TO-92

NPN Bipolar Junction Transistor (BJT) in a TO-92-3 package, designed for through-hole mounting. Features a maximum collector-emitter voltage (VCEO) of 30V and a maximum collector current of 100mA. Offers a minimum DC current gain (hFE) of 300 and a transition frequency of 50MHz. Operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 625mW. This component is lead-free and RoHS compliant, supplied in an ammo pack with 2000 units.

Frequency50MHz

PackageTO-92-3

Current Rating100mA

MountingThrough Hole

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Technical Specifications

Onsemi 2N5088TA technical specifications.

General

Package/Case	TO-92-3
Collector Base Voltage (VCBO)	35V
Collector Emitter Breakdown Voltage	30V
Collector Emitter Saturation Voltage	500mV
Collector Emitter Voltage (VCEO)	30V
Collector-emitter Voltage-Max	500mV
Current Rating	100mA
Emitter Base Voltage (VEBO)	4.5V
Frequency	50MHz
Gain Bandwidth Product	50MHz
Height	5.33mm
hFE Min	300
Lead Free	Lead Free
Length	5.2mm
Max Breakdown Voltage	30V
Max Collector Current	100mA
Max Frequency	50MHz
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	625mW
Mount	Through Hole
Number of Elements	1
Package Quantity	2000
Packaging	Ammo Pack
Polarity	NPN
Power Dissipation	625mW
Radiation Hardening	No
RoHS Compliant	Yes
Transition Frequency	50MHz
DC Rated Voltage	30V
Weight	0.24g
Width	4.19mm