NPN Bipolar Junction Transistor (BJT) in a TO-92 package. Features a 25V collector-emitter breakdown voltage and 50mA maximum collector current. Offers a minimum DC current gain (hFE) of 400 and a transition frequency of 50MHz. Operates across a temperature range of -55°C to 150°C with a maximum power dissipation of 625mW. This RoHS compliant component is supplied in bulk packaging.
Onsemi 2N5089G technical specifications.
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | 30V |
| Collector Emitter Breakdown Voltage | 25V |
| Collector Emitter Saturation Voltage | 500mV |
| Collector Emitter Voltage (VCEO) | 25V |
| Collector-emitter Voltage-Max | 500mV |
| Current Rating | 50mA |
| Emitter Base Voltage (VEBO) | 3V |
| Frequency | 50MHz |
| Gain Bandwidth Product | 50MHz |
| hFE Min | 400 |
| Lead Free | Lead Free |
| Max Collector Current | 50mA |
| Max Frequency | 50MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Number of Elements | 1 |
| Package Quantity | 5000 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 625mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 50MHz |
| DC Rated Voltage | 25V |
| RoHS | Compliant |
No datasheet is available for this part.
