PNP Bipolar Junction Transistor (BJT) with a maximum collector current of 4A and a collector-emitter voltage of 60V. Features a transition frequency of 2MHz, minimum DC current gain (hFE) of 25, and a maximum power dissipation of 40W. Packaged in a TO-225-3 case, this component operates within a temperature range of -65°C to 150°C and is RoHS compliant.
Frequency2MHz
PackageTO-225-3
Current Rating-4A
PolarityPNP
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Technical Specifications
Onsemi 2N5194G technical specifications.
General
Package/Case
TO-225-3
Collector Base Voltage (VCBO)
60V
Collector Emitter Breakdown Voltage
60V
Collector Emitter Saturation Voltage
1.4V
Collector Emitter Voltage (VCEO)
60V
Collector-emitter Voltage-Max
1.4V
Current Rating
-4A
Emitter Base Voltage (VEBO)
5V
Frequency
2MHz
Gain Bandwidth Product
2MHz
Halogen Free
Halogen Free
Height
0.437inch
hFE Min
25
Lead Free
Lead Free
Length
0.307inch
Max Collector Current
4A
Max Frequency
2MHz
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
40W
Number of Elements
1
Package Quantity
500
Packaging
Bulk
Polarity
PNP
Power Dissipation
40W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
2N5194
Transition Frequency
2MHz
DC Rated Voltage
-60V
Width
0.118inch
Compliance
RoHS
Compliant
Datasheet
Onsemi 2N5194G Datasheet
Download the complete datasheet for Onsemi 2N5194G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.