NPN Bipolar Junction Transistor (BJT) for amplification, featuring a 50V collector-emitter breakdown voltage and a maximum collector current of 100mA. This through-hole component offers a minimum DC current gain (hFE) of 200 and a transition frequency of 30MHz. Packaged in TO-92-3 on tape and reel, it operates within a temperature range of -55°C to 150°C with a power dissipation of 625mW. RoHS compliant and lead-free.
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Onsemi 2N5210TFR technical specifications.
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | 50V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 700mV |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 700mV |
| Current Rating | 100mA |
| Emitter Base Voltage (VEBO) | 4.5V |
| Frequency | 30MHz |
| Gain Bandwidth Product | 30MHz |
| Height | 5.33mm |
| hFE Min | 200 |
| Lead Free | Lead Free |
| Length | 5.2mm |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 625mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 30MHz |
| DC Rated Voltage | 50V |
| Weight | 0.24g |
| Width | 4.19mm |
| RoHS | Compliant |
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