The 2N5366 is a PNP bipolar junction transistor with a collector-emitter breakdown voltage of 40V and a maximum collector current of 500mA. It has a maximum power dissipation of 625mW and operates over a temperature range of -55°C to 150°C. The transistor is packaged in a TO-92 case and is available in a bulk packaging quantity of 2000. It is lead-free and RoHS compliant.
PackageTO-92
Current Rating-500mA
MountingThrough Hole
PolarityPNP
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Technical Specifications
Onsemi 2N5366 technical specifications.
General
| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | 40V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Voltage (VCEO) | 40V |
| Collector-emitter Voltage-Max | 1V |
| Current Rating | -500mA |
| Emitter Base Voltage (VEBO) | 4V |
| hFE Min | 100 |
| Lead Free | Lead Free |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Bulk |
| Polarity | PNP |
| Power Dissipation | 625mW |
| RoHS Compliant | Yes |
| DC Rated Voltage | -40V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi 2N5366 Datasheet
Download the complete datasheet for Onsemi 2N5366 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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