The 2N5401_D10Z is a PNP bipolar junction transistor with a collector-emitter breakdown voltage of 150V and a maximum collector current of 600mA. It is packaged in a TO-226-3 case and is suitable for through-hole mounting. The transistor has a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It is not RoHS compliant.
Onsemi 2N5401_D10Z technical specifications.
| Package/Case | TO-226-3 |
| Collector Base Voltage (VCBO) | -160V |
| Collector Emitter Breakdown Voltage | 150V |
| Collector Emitter Voltage (VCEO) | 150V |
| Collector-emitter Voltage-Max | 500mV |
| Emitter Base Voltage (VEBO) | -5V |
| Frequency | 400MHz |
| Gain Bandwidth Product | 300MHz |
| hFE Min | 60 |
| Lead Free | Lead Free |
| Max Collector Current | 600mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 625mW |
| RoHS Compliant | No |
| Transition Frequency | 400MHz |
| DC Rated Voltage | -160V |
| RoHS | Not Compliant |
No datasheet is available for this part.
