PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 150V collector-emitter voltage (VCEO) and a maximum collector current of 600mA. Offers a transition frequency of 300MHz and a minimum hFE of 50. Packaged in a TO-92-3 through-hole mount configuration, this lead-free component operates from -55°C to 150°C with a power dissipation of 625mW.
Sign in to ask questions about the Onsemi 2N5401RLRMG datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Onsemi 2N5401RLRMG technical specifications.
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | 160V |
| Collector Emitter Breakdown Voltage | 150V |
| Collector Emitter Saturation Voltage | 500mV |
| Collector Emitter Voltage (VCEO) | 150V |
| Collector-emitter Voltage-Max | 500mV |
| Current Rating | -600mA |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 300MHz |
| Gain Bandwidth Product | 300MHz |
| hFE Min | 50 |
| Lead Free | Lead Free |
| Max Collector Current | 600mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Ammo Pack |
| Polarity | PNP |
| Power Dissipation | 625mW |
| RoHS Compliant | Yes |
| Transition Frequency | 300MHz |
| DC Rated Voltage | -150V |
| RoHS | Compliant |
Download the complete datasheet for Onsemi 2N5401RLRMG to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
