The 2N5457G is an N-CHANNEL junction field-effect transistor with a maximum operating temperature range of -65°C to 135°C. It features a drain to source breakdown voltage of 25V and a drain to source resistance of 2mR. The device is packaged in a lead-free TO-92-3 package and is suitable for through-hole mounting. The 2N5457G is RoHS compliant and has a maximum power dissipation of 310mW.
PackageTO-92-3
Current Rating10mA
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Onsemi 2N5457G technical specifications.
General
| Package/Case | TO-92-3 |
| Current Rating | 10mA |
| Drain to Source Breakdown Voltage | 25V |
| Drain to Source Resistance | 2mR |
| Drain to Source Voltage (Vdss) | 25V |
| Gate to Source Voltage (Vgs) | 25V |
| Input Capacitance | 7pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 135°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 310mW |
| Mount | Through Hole |
| Package Quantity | 1000 |
| Packaging | Bulk |
| Polarity | N-CHANNEL |
| Power Dissipation | 200mW |
| RoHS Compliant | Yes |
| DC Rated Voltage | 25V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi 2N5457G Datasheet
Download the complete datasheet for Onsemi 2N5457G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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