The 2N5462_D27Z is a P-channel junction field-effect transistor with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 350mW and a continuous drain current of 10mA. The device is packaged in a TO-92-3 package and is available in quantities of 2000 on tape and reel. The transistor has a drain to source voltage of 40V and a gate to source voltage of 40V. It is a lead-free device and is not radiation hardened.
PackageTO-92-3
Current Rating-10mA
MountingThrough Hole
PolarityP-CHANNEL
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Technical Specifications
Onsemi 2N5462_D27Z technical specifications.
General
| Package/Case | TO-92-3 |
| Continuous Drain Current (ID) | 10mA |
| Current Rating | -10mA |
| Drain to Source Voltage (Vdss) | 40V |
| Gate to Source Voltage (Vgs) | 40V |
| Input Capacitance | 7pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 350mW |
| Mount | Through Hole |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 350mW |
| Radiation Hardening | No |
| Series | 2N5462 |
| DC Rated Voltage | -40V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi 2N5462_D27Z Datasheet
Download the complete datasheet for Onsemi 2N5462_D27Z to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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