
N-channel RF small signal JFET transistor designed for UHF band applications. Features a 400MHz operating frequency, 25V drain-to-source voltage (Vdss), and 10mA continuous drain current (ID). Housed in a TO-92 package for through-hole mounting, this component offers a 4dB noise figure and 5pF input capacitance. Maximum power dissipation is 350mW, with operating temperatures ranging from -65°C to 150°C.
Onsemi 2N5485 technical specifications.
| Package/Case | TO-92 |
| Continuous Drain Current (ID) | 10mA |
| Drain to Source Voltage (Vdss) | 25V |
| Frequency | 400MHz |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 5.33mm |
| Input Capacitance | 5pF |
| Lead Free | Lead Free |
| Length | 5.2mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 350mW |
| Mount | Through Hole |
| Noise Figure | 4dB |
| Package Quantity | 2000 |
| Packaging | Bulk |
| Polarity | N-CHANNEL |
| Power Dissipation | 350mW |
| RoHS Compliant | No |
| Test Voltage | 15V |
| Voltage Rating | 25V |
| DC Rated Voltage | 25V |
| Weight | 0.201g |
| Width | 4.19mm |
| RoHS | Not Compliant |
Download the complete datasheet for Onsemi 2N5485 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
