N-channel Junction Field-Effect Transistor (JFET) designed for RF amplification. Features a 25V drain-to-source voltage (Vdss) and a continuous drain current (ID) of 20mA. Operates up to 400MHz with a noise figure of 4dB. Housed in a TO-92-3 package for through-hole mounting. Maximum power dissipation is 350mW, with an operating temperature range of -55°C to 150°C.
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Onsemi 2N5486_D26Z technical specifications.
| Package/Case | TO-92-3 |
| Continuous Drain Current (ID) | 20mA |
| Current Rating | 20mA |
| Drain to Source Voltage (Vdss) | 25V |
| Frequency | 400MHz |
| Gate to Source Voltage (Vgs) | -25V |
| Height | 5.33mm |
| Input Capacitance | 5pF |
| Lead Free | Lead Free |
| Length | 5.2mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 350mW |
| Mount | Through Hole |
| Noise Figure | 4dB |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 350mW |
| Radiation Hardening | No |
| Test Voltage | 15V |
| Voltage Rating | 25V |
| DC Rated Voltage | 25V |
| Weight | 0.00709oz |
| Width | 4.19mm |
| RoHS | Compliant |
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