Small signal NPN bipolar junction transistor (BJT) designed for through-hole mounting. Features a maximum collector-emitter voltage (VCEO) of 140V and a maximum collector current of 600mA. Offers a minimum DC current gain (hFE) of 60 and a transition frequency of 300MHz. Packaged in a TO-92-3 case, this lead-free component operates within a temperature range of -55°C to 150°C.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Onsemi 2N5550TF datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | 160V |
| Collector Emitter Breakdown Voltage | 140V |
| Collector Emitter Saturation Voltage | 250mV |
| Collector Emitter Voltage (VCEO) | 140V |
| Collector-emitter Voltage-Max | 250mV |
| Current Rating | 600mA |
| Emitter Base Voltage (VEBO) | 6V |
| Frequency | 300MHz |
| Gain Bandwidth Product | 100MHz |
| hFE Min | 60 |
| Lead Free | Lead Free |
| Max Collector Current | 600mA |
| Max Frequency | 300MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 625mW |
| Radiation Hardening | No |
| Transition Frequency | 300MHz |
| DC Rated Voltage | 140V |
| Weight | 0.1782g |
| RoHS | Not CompliantNo |
Download the complete datasheet for Onsemi 2N5550TF to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
