
Small Signal NPN Bipolar Junction Transistor (BJT) designed for through-hole mounting. Features a 140V Collector-Emitter Voltage (VCEO) and a 600mA maximum collector current. Operates with a minimum hFE of 60 and a transition frequency of 300MHz. Packaged in a TO-92-3 case on a 2000-piece tape and reel, this lead-free and RoHS compliant component offers a wide operating temperature range from -55°C to 150°C.
Sign in to ask questions about the Onsemi 2N5550TFR datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Onsemi 2N5550TFR technical specifications.
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | 160V |
| Collector Emitter Breakdown Voltage | 140V |
| Collector Emitter Saturation Voltage | 250mV |
| Collector Emitter Voltage (VCEO) | 140V |
| Collector-emitter Voltage-Max | 250mV |
| Current Rating | 600mA |
| Emitter Base Voltage (VEBO) | 6V |
| Frequency | 300MHz |
| Gain Bandwidth Product | 300MHz |
| Height | 4.58mm |
| hFE Min | 60 |
| Lead Free | Lead Free |
| Length | 4.58mm |
| Max Breakdown Voltage | 140V |
| Max Collector Current | 600mA |
| Max Frequency | 300MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 625mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 300MHz |
| DC Rated Voltage | 140V |
| Weight | 0.24g |
| Width | 3.86mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi 2N5550TFR to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
