The 2N5551 is a TO-92-3 packaged NPN bipolar junction transistor with a maximum collector current of 600mA and a maximum operating temperature of 150°C. It has a collector-emitter breakdown voltage of 160V and a collector-emitter saturation voltage of 250mV. The transistor is RoHS compliant and has a gain bandwidth product of 300MHz.
PackageTO-92-3
Voltage160V
Current600mA
MountingThrough Hole
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Technical Specifications
Onsemi 2N5551 technical specifications.
General
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | 180V |
| Collector Emitter Breakdown Voltage | 160V |
| Collector Emitter Saturation Voltage | 250mV |
| Collector Emitter Voltage (VCEO) | 160V |
| Collector-emitter Voltage-Max | 200mV |
| Current | 600mA |
| Emitter Base Voltage (VEBO) | 6V |
| Gain Bandwidth Product | 300MHz |
| hFE Min | 80 |
| Max Collector Current | 600mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Package Quantity | 5000 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 350mW |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 300MHz |
| Voltage | 160V |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi 2N5551 Datasheet
Download the complete datasheet for Onsemi 2N5551 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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