NPN Bipolar Junction Transistor (BJT) in a TO-92 package. Features a 160V collector-emitter voltage (VCEO) and 180V collector-base voltage (VCBO). Offers a maximum collector current of 600mA and a transition frequency of 300MHz. Includes a minimum DC current gain (hFE) of 80 and a maximum power dissipation of 625mW. Operates across a temperature range of -55°C to 150°C.
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| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | 180V |
| Collector Emitter Breakdown Voltage | 160V |
| Collector Emitter Saturation Voltage | 250mV |
| Collector Emitter Voltage (VCEO) | 160V |
| Collector-emitter Voltage-Max | 200mV |
| Current Rating | 600mA |
| Emitter Base Voltage (VEBO) | 6V |
| Frequency | 300MHz |
| Gain Bandwidth Product | 300MHz |
| hFE Min | 80 |
| Lead Free | Lead Free |
| Max Collector Current | 600mA |
| Max Frequency | 300MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Box |
| Polarity | NPN |
| Power Dissipation | 625mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Series | 2N5551 |
| Transition Frequency | 300MHz |
| DC Rated Voltage | 160V |
| RoHS | Compliant |
These are design resources that include the Onsemi 2N5551ZL1G
Official notice from ON Semiconductor detailing the discontinuance of various discrete, analog, and power products with final buy dates in late 2006.
