The 2N5639G is an N-channel junction field-effect transistor with a drain to source breakdown voltage of 30V and a current rating of 10mA. It is packaged in a TO-92-3 package and is designed for through hole mounting. The device is RoHS compliant and has a maximum operating temperature of 135°C and a minimum operating temperature of -65°C. The 2N5639G is suitable for use in a variety of applications including general purpose switching and amplification.
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| Package/Case | TO-92-3 |
| Current Rating | 10mA |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Voltage (Vdss) | 30V |
| Gate to Source Voltage (Vgs) | 35V |
| Input Capacitance | 10pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 135°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 310mW |
| Mount | Through Hole |
| Package Quantity | 1000 |
| Packaging | Bulk |
| Polarity | N-CHANNEL |
| RoHS Compliant | Yes |
| DC Rated Voltage | 30V |
| RoHS | Compliant |
These are design resources that include the Onsemi 2N5639G
ON Semiconductor 4Q06 product discontinuance notice for discrete, analog, logic, ECL, and power products. Last buy date is July 2, 2007; last ship date is January 2, 2008.
Official notice from ON Semiconductor detailing the discontinuance of various discrete, analog, and power products with final buy dates in late 2006.
