The 2N5655 is a NPN bipolar junction transistor with a collector-emitter breakdown voltage of 250V and a maximum collector current of 500mA. It has a gain bandwidth product of 10MHz and a maximum power dissipation of 20W. The transistor is packaged in a TO-225-3 case and has a maximum operating temperature range of -65°C to 150°C. It is not RoHS compliant due to the presence of lead.
PackageTO-225-3
Current Rating500mA
PolarityNPN
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Technical Specifications
Onsemi 2N5655 technical specifications.
General
| Package/Case | TO-225-3 |
| Collector Base Voltage (VCBO) | 275V |
| Collector Emitter Breakdown Voltage | 250V |
| Collector Emitter Saturation Voltage | 1V |
| Collector-emitter Voltage-Max | 10V |
| Current Rating | 500mA |
| Emitter Base Voltage (VEBO) | 6V |
| Gain Bandwidth Product | 10MHz |
| hFE Min | 25 |
| Lead Free | Contains Lead |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 20W |
| Package Quantity | 500 |
| Packaging | Bulk |
| Polarity | NPN |
| RoHS Compliant | No |
| Transition Frequency | 10MHz |
| DC Rated Voltage | 250V |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi 2N5655 Datasheet
Download the complete datasheet for Onsemi 2N5655 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.