The 2N5655 is a NPN bipolar junction transistor with a collector-emitter breakdown voltage of 250V and a maximum collector current of 500mA. It has a gain bandwidth product of 10MHz and a maximum power dissipation of 20W. The transistor is packaged in a TO-225-3 case and has a maximum operating temperature range of -65°C to 150°C. It is not RoHS compliant due to the presence of lead.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Onsemi 2N5655 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Onsemi 2N5655 technical specifications.
| Package/Case | TO-225-3 |
| Collector Base Voltage (VCBO) | 275V |
| Collector Emitter Breakdown Voltage | 250V |
| Collector Emitter Saturation Voltage | 1V |
| Collector-emitter Voltage-Max | 10V |
| Current Rating | 500mA |
| Emitter Base Voltage (VEBO) | 6V |
| Gain Bandwidth Product | 10MHz |
| hFE Min | 25 |
| Lead Free | Contains Lead |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 20W |
| Package Quantity | 500 |
| Packaging | Bulk |
| Polarity | NPN |
| RoHS Compliant | No |
| Transition Frequency | 10MHz |
| DC Rated Voltage | 250V |
| RoHS | Not Compliant |
Download the complete datasheet for Onsemi 2N5655 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
