High voltage NPN bipolar junction power transistor in a TO-225 package. Features a 250V collector-emitter voltage (VCEO) and 275V collector-base voltage (VCBO). Offers a maximum collector current of 500mA and a power dissipation of 20W. Operates across a wide temperature range from -65°C to 150°C, with a transition frequency of 10MHz. This RoHS compliant component is supplied in bulk packaging.
Frequency10MHz
PackageTO-225-3
Current Rating500mA
PolarityNPN
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Technical Specifications
Onsemi 2N5655G technical specifications.
General
| Package/Case | TO-225-3 |
| Collector Base Voltage (VCBO) | 275V |
| Collector Emitter Breakdown Voltage | 250V |
| Collector Emitter Saturation Voltage | 1V |
| Collector Emitter Voltage (VCEO) | 250V |
| Collector-emitter Voltage-Max | 10V |
| Contact Plating | Tin, Matte |
| Current Rating | 500mA |
| Emitter Base Voltage (VEBO) | 6V |
| Frequency | 10MHz |
| Gain Bandwidth Product | 10MHz |
| Halogen Free | Halogen Free |
| hFE Min | 30 |
| Lead Free | Lead Free |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 20W |
| Number of Elements | 1 |
| Package Quantity | 500 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 20W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | 2N5655 |
| Transition Frequency | 10MHz |
| DC Rated Voltage | 250V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi 2N5655G Datasheet
Download the complete datasheet for Onsemi 2N5655G to view detailed technical specifications.
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