NPN Bipolar Junction Transistor (BJT) for RF small signal applications. Features a TO-92 package for through-hole mounting. Offers a maximum collector current of 50mA and a collector-emitter breakdown voltage of 15V. Maximum power dissipation is 350mW, with operating temperatures ranging from -55°C to 150°C. Includes a minimum hFE of 50 and a gain of 15dB. Lead-free and RoHS compliant.
PackageTO-92
Current Rating50mA
MountingThrough Hole
PolarityNPN
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Technical Specifications
Onsemi 2N5770 technical specifications.
General
| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | 30V |
| Collector Emitter Breakdown Voltage | 15V |
| Collector Emitter Saturation Voltage | 400mV |
| Collector Emitter Voltage (VCEO) | 15V |
| Collector-emitter Voltage-Max | 15V |
| Current Rating | 50mA |
| Emitter Base Voltage (VEBO) | 4.5V |
| Gain | 15dB |
| hFE Min | 50 |
| Lead Free | Lead Free |
| Max Collector Current | 50mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 350mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 350mW |
| RoHS Compliant | Yes |
| DC Rated Voltage | 15V |
| Weight | 0.201g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi 2N5770 Datasheet
Download the complete datasheet for Onsemi 2N5770 to view detailed technical specifications.
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