PNP Bipolar Junction Transistor (BJT) in a TO-92 package, designed for through-hole mounting. Features a maximum collector current of 200mA and a collector-emitter voltage (VCEO) of 15V. Offers a minimum DC current gain (hFE) of 50 and a gain bandwidth product of 8.5MHz. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 350mW. This RoHS compliant component is supplied in bulk packaging.
Frequency8.5MHz
PackageTO-92
Current Rating-200mA
MountingThrough Hole
Quick Jump:
Chat with Datasheet
Sponsored by
Sign in to ask questions about the Onsemi 2N5771 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Technical Specifications
Onsemi 2N5771 technical specifications.
General
| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | 15V |
| Collector Emitter Breakdown Voltage | 15V |
| Collector Emitter Saturation Voltage | 600mV |
| Collector Emitter Voltage (VCEO) | 15V |
| Collector-emitter Voltage-Max | 600mV |
| Current Rating | -200mA |
| Emitter Base Voltage (VEBO) | 4.5V |
| Frequency | 8.5MHz |
| Gain Bandwidth Product | 8.5MHz |
| hFE Min | 50 |
| Lead Free | Lead Free |
| Max Collector Current | 200mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 350mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Bulk |
| Polarity | PNP |
| Power Dissipation | 350mW |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | Through Hole |
| DC Rated Voltage | -15V |
| Weight | 0.201g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi 2N5771 Datasheet
Download the complete datasheet for Onsemi 2N5771 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
Product Images
