The 2N5771_D26Z is a PNP bipolar junction transistor with a TO-92-3 package and through hole mount. It has a collector-emitter breakdown voltage of 15V and a collector-emitter saturation voltage of 600mV. The transistor can handle a maximum collector current of 200mA and a maximum power dissipation of 350mW. It operates within a temperature range of -55°C to 150°C and is lead free.
Frequency8.5MHz
PackageTO-92-3
Current Rating-200mA
MountingThrough Hole
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Technical Specifications
Onsemi 2N5771_D26Z technical specifications.
General
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | 15V |
| Collector Emitter Breakdown Voltage | 15V |
| Collector Emitter Saturation Voltage | 600mV |
| Collector Emitter Voltage (VCEO) | 15V |
| Collector-emitter Voltage-Max | 600mV |
| Current Rating | -200mA |
| Emitter Base Voltage (VEBO) | 4.5V |
| Frequency | 8.5MHz |
| Gain Bandwidth Product | 8.5MHz |
| hFE Min | 50 |
| Lead Free | Lead Free |
| Max Collector Current | 200mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 350mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 350mW |
| DC Rated Voltage | -15V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi 2N5771_D26Z Datasheet
Download the complete datasheet for Onsemi 2N5771_D26Z to view detailed technical specifications.
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