PNP Bipolar Junction Power Transistor featuring a 60V collector-emitter breakdown voltage and a 25A continuous collector current. This TO-204 package transistor offers a maximum power dissipation of 200W and a transition frequency of 4MHz. With a minimum hFE of 20 and a collector-emitter saturation voltage of 1V, it is designed for robust power applications. The component is RoHS compliant and operates within a temperature range of -65°C to 200°C.
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Onsemi 2N5883G technical specifications.
| Package/Case | TO-204-3 |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | 1V |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector-emitter Voltage-Max | 4V |
| Contact Plating | Tin, Matte |
| Current Rating | 25A |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 4MHz |
| Gain Bandwidth Product | 4MHz |
| hFE Min | 20 |
| Lead Free | Lead Free |
| Max Collector Current | 25A |
| Max Frequency | 4MHz |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 200W |
| Number of Elements | 1 |
| Package Quantity | 100 |
| Packaging | Tray |
| Polarity | PNP |
| Power Dissipation | 200W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 4MHz |
| DC Rated Voltage | -60V |
| RoHS | Compliant |
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