PNP Bipolar Junction Transistor (BJT) designed for power applications. Features a maximum collector current of 25A and a collector-emitter voltage of 80V. Operates with a transition frequency of 4MHz and a maximum power dissipation of 200W. Packaged in a TO-204 (TO-3) case, this RoHS compliant component offers a wide operating temperature range from -65°C to 200°C.
Frequency4MHz
PackageTO-204-3
Current Rating-25A
PolarityPNP
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Technical Specifications
Onsemi 2N5884G technical specifications.
General
| Package/Case | TO-204-3 |
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | 1V |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector-emitter Voltage-Max | 4V |
| Current Rating | -25A |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 4MHz |
| Gain Bandwidth Product | 4MHz |
| Height | 1.05inch |
| hFE Min | 20 |
| Lead Free | Lead Free |
| Length | 1.55inch |
| Max Collector Current | 25A |
| Max Frequency | 4MHz |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 200W |
| Number of Elements | 1 |
| Package Quantity | 100 |
| Packaging | Tray |
| Polarity | PNP |
| Power Dissipation | 200W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 4MHz |
| DC Rated Voltage | -80V |
| Width | 0.335inch |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi 2N5884G Datasheet
Download the complete datasheet for Onsemi 2N5884G to view detailed technical specifications.
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