ONSEMI

2N5952

Datasheet

N-Channel RF FET, 30V Vdss, 8mA ID, TO-92, Through Hole

Onsemi

2N5952

Name: 2N5952 Onsemi
Brand: Onsemi
SKU: 2N5952

N-Channel RF FET, 30V Vdss, 8mA ID, TO-92, Through Hole

N-channel RF small signal field-effect transistor in a TO-92 package. Features a maximum drain-source voltage of 30V and a continuous drain current of 8mA. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 350mW. Exhibits a noise figure of 2dB at 1kHz and 15V test voltage, with an input capacitance of 6pF. Through-hole mounting design.

Frequency1kHz

PackageTO-92

Voltage Rating30V

MountingThrough Hole

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Technical Specifications

Onsemi 2N5952 technical specifications.

General

Package/Case	TO-92
Continuous Drain Current (ID)	8mA
Drain to Source Voltage (Vdss)	30V
Frequency	1kHz
Gate to Source Voltage (Vgs)	-30V
Height	5.33mm
Input Capacitance	6pF
Lead Free	Lead Free
Length	5.2mm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	350mW
Mount	Through Hole
Noise Figure	2dB
Package Quantity	2000
Packaging	Bulk
Polarity	N-CHANNEL
Power Dissipation	350mW
Reach SVHC Compliant	Unknown
Test Voltage	15V
Voltage Rating	30V
DC Rated Voltage	-30V
Weight	0.201g
Width	4.19mm