
PNP Darlington Bipolar Junction Transistor (BJT) with a 4A continuous collector current and 40V collector-emitter voltage. Features a 2V collector-emitter saturation voltage and 5V emitter-base voltage. Housed in a TO-225 package with tin, matte contact plating. Operates from -65°C to 150°C with a maximum power dissipation of 40W. RoHS and Halogen Free compliant.
Onsemi 2N6034G technical specifications.
| Package/Case | TO-225-3 |
| Collector Base Voltage (VCBO) | 40V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Saturation Voltage | 2V |
| Collector Emitter Voltage (VCEO) | 40V |
| Collector-emitter Voltage-Max | 3V |
| Contact Plating | Tin, Matte |
| Continuous Collector Current | 4A |
| Current Rating | 4A |
| Emitter Base Voltage (VEBO) | 5V |
| Halogen Free | Halogen Free |
| Height | 11.04mm |
| Lead Free | Lead Free |
| Length | 7.74mm |
| Max Collector Current | 4A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 40W |
| Number of Elements | 1 |
| Package Quantity | 500 |
| Packaging | Bulk |
| Polarity | PNP |
| Power Dissipation | 1.5W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | -40V |
| Width | 2.66mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi 2N6034G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
