
PNP Darlington bipolar junction transistor in a TO-220-3 package. Features a 100V collector-emitter breakdown voltage and a continuous collector current of 8A. Maximum power dissipation is 75W. Operates within a temperature range of -65°C to 150°C. RoHS compliant with tin, matte contact plating.
Onsemi 2N6042G technical specifications.
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | 2V |
| Collector Emitter Voltage (VCEO) | 100V |
| Collector-emitter Voltage-Max | 2V |
| Contact Plating | Tin, Matte |
| Continuous Collector Current | 8A |
| Current Rating | -8A |
| Emitter Base Voltage (VEBO) | 5V |
| Height | 0.62inch |
| Lead Free | Lead Free |
| Length | 0.404inch |
| Max Collector Current | 8A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 75W |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | PNP |
| Power Dissipation | 75W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | -100V |
| Width | 0.19inch |
| RoHS | Compliant |
Download the complete datasheet for Onsemi 2N6042G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
