NPN Darlington bipolar junction transistor with a 100V collector-emitter breakdown voltage and 8A continuous collector current. Features a maximum power dissipation of 75W and a minimum DC current gain (hFE) of 1000. Packaged in a TO-220-3 configuration, this component operates within a temperature range of -65°C to 150°C and is RoHS compliant.
PackageTO-220-3
Current Rating8A
PolarityNPN
Power75W
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Technical Specifications
Onsemi 2N6045G technical specifications.
General
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | 2V |
| Collector Emitter Voltage (VCEO) | 100V |
| Collector-emitter Voltage-Max | 2V |
| Continuous Collector Current | 8A |
| Current Rating | 8A |
| Emitter Base Voltage (VEBO) | 5V |
| Height | 0.62inch |
| hFE Min | 1000 |
| Lead Free | Lead Free |
| Length | 0.404inch |
| Max Collector Current | 8A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 75W |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 75W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | -100V |
| Width | 0.19inch |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi 2N6045G Datasheet
Download the complete datasheet for Onsemi 2N6045G to view detailed technical specifications.
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