The 2N6052 is a PNP bipolar junction transistor with a collector-emitter breakdown voltage of 100V and a maximum collector current of 12A. It is packaged in a TO-204-2 case and is mounted through a hole. The transistor has a maximum power dissipation of 150W and an operating temperature range of -65°C to 200°C. It is not RoHS compliant and contains lead.
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Onsemi 2N6052 technical specifications.
| Package/Case | TO-204-2 |
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector-emitter Voltage-Max | 3V |
| Continuous Collector Current | 12A |
| Current Rating | -12A |
| Emitter Base Voltage (VEBO) | 5V |
| Lead Free | Contains Lead |
| Max Collector Current | 12A |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 150W |
| Mount | Through Hole |
| Package Quantity | 100 |
| Packaging | Tray |
| Polarity | PNP |
| Power Dissipation | 150W |
| RoHS Compliant | No |
| DC Rated Voltage | -100V |
| RoHS | Not Compliant |
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