PNP Bipolar Junction Transistor (BJT) with a 7A continuous collector current and 50V collector-emitter voltage. Features a 40W power dissipation and a transition frequency of 10MHz. Packaged in a TO-220-3 standard case with tin, matte contact plating. Operates across a temperature range of -65°C to 150°C. RoHS compliant and lead-free.
Frequency10MHz
PackageTO-220-3
Current Rating7A
PolarityPNP
Quick Jump:
Chat with Datasheet
Sponsored by
Sign in to ask questions about the Onsemi 2N6109G datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Technical Specifications
Onsemi 2N6109G technical specifications.
General
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 3.5V |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 3.5V |
| Contact Plating | Tin, Matte |
| Current Rating | 7A |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 10MHz |
| Gain Bandwidth Product | 10MHz |
| Height | 0.62inch |
| hFE Min | 30 |
| Lead Free | Lead Free |
| Length | 0.404inch |
| Max Collector Current | 7A |
| Max Frequency | 10MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 40W |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | PNP |
| Power Dissipation | 40W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 10MHz |
| DC Rated Voltage | -50V |
| Width | 0.19inch |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi 2N6109G Datasheet
Download the complete datasheet for Onsemi 2N6109G to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
Product Images
