
PNP Bipolar Junction Transistor (BJT) with a 7A continuous collector current and 50V collector-emitter voltage. Features a 40W power dissipation and a transition frequency of 10MHz. Packaged in a TO-220-3 standard case with tin, matte contact plating. Operates across a temperature range of -65°C to 150°C. RoHS compliant and lead-free.
Onsemi 2N6109G technical specifications.
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 3.5V |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 3.5V |
| Contact Plating | Tin, Matte |
| Current Rating | 7A |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 10MHz |
| Gain Bandwidth Product | 10MHz |
| Height | 0.62inch |
| hFE Min | 30 |
| Lead Free | Lead Free |
| Length | 0.404inch |
| Max Collector Current | 7A |
| Max Frequency | 10MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 40W |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | PNP |
| Power Dissipation | 40W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 10MHz |
| DC Rated Voltage | -50V |
| Width | 0.19inch |
| RoHS | Compliant |
Download the complete datasheet for Onsemi 2N6109G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
